![]() parametric-filter Digital power isolated controllers.parametric-filter Multi-protocol products.parametric-filter Other wireless technologies.parametric-filter Digital signal processors (DSPs).parametric-filter Arm-based microcontrollers.parametric-filter C2000 real-time microcontrollers. ![]() parametric-filter MSP430 microcontrollers.These features combine to provide very high efficiency power switching.Checksum This design resource supports most products in these categories.Ĭheck the product details page to verify support. ![]() Additionally, the transistor features a simple gate drive (0 V to 6 V), high switching frequency (> 10 MHz), fast and controllable fall and rise times, reverse current capability, and zero reverse recovery loss. The GS61008P bottom-side cooled GaN-on-silicon power transistor offers low on-resistance, low gate charge, junction-to-case thermal resistance, and high current capabilities for demanding high power applications. Features include 150V, high-side and low-side gate driver, 200 V/ns dV/dt rating, and offers protection functions such as an independent under-voltage lockout (UVLO) for high-side and low-side output stages. The OnSemi NCP51810 high-speed gate driver is designed to meet the requirements of driving E-mode GaN HEMT power switches in half-bridge power topologies. Additional benefits include fast propagation delay of 50 ns max, increased efficiency and allows paralleling, and control of rise and fall time for EMI tuning. ![]() One of the major benefits is the evaluation board’s small size with several pins are available to probe the circuit. HS and LS gate drives, as well as SWN are accessible. ![]()
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January 2023
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